Lee and Son: Effect of oxygen-deficient NiO1−δ layer thickness on the resistive random access memory characteristics of NiO thin films #ThinFilms #OxygenDeficientLayers #RRAM @khuniv...#IUCr https://journals.iucr.org/paper?S1600576726001573
journals.iucr.org
The resistive switching characteristics of NiO-based RRAM capacitors were enhanced by introducing oxygen-deficient NiO0.95 layers at both electrode interfaces. Increasing the thickness of the NiO0.95 layer effectively reduced the Schottky barrier height, thereby lowering the forming, SET and RESET voltages and improving overall device performance.
